| PART |
Description |
Maker |
| K4S281633D-N1H K4S281633D-N1L K4S281633D-N75 K4S28 |
IC REG ULDO DUAL 2.8/1.5V 6-MLF
8Mx16 SDRAM 54CSP
2M x 16Bit x 4 Banks SDRAM in 54CSP Data Sheet
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| HY5DU561622ETP HY5DU561622ETP-28 HY5DU561622ETP-33 |
256M(16Mx16) gDDR SDRAM
|
Hynix Semiconductor
|
| HY5DU561622FTP-4 HY5DU561622FTP-5 HY5DU561622FLTP- |
256M(16Mx16) DDR SDRAM
|
Hynix Semiconductor
|
| M470L1624BT0 |
16Mx64 200pin DDR SDRAM SODIMM based on 16Mx16 Data Sheet
|
Samsung Electronic
|
| M464S1654BT1-C1H M464S1654BT1-C1L M464S1654BT1-L1L |
16Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K4X56163PE-LG K4X56163PE-LFG |
16M x16 Mobile DDR SDRAM 1,600 x16移动DDR SDRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| M366S1654CTS-C7A M366S1654CTS-L1L M366S1654CTS-C7C |
16Mx64 SDRAM DIMM based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD 16Mx64 SDRAM的内存在16Mx16显示BanksK的刷新，3.3V的同步DRAM的社民党
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| V53C1256162VAUS7IPC V53C1256162VAUT8IPC V53C125616 |
256Mbit MOBILE SDRAM 2.5 VOLT FBGA PACKAGE 16M X 16 56Mbit移动SDRAM 2.5伏FBGA封装16米x 16
256Mbit MOBILE SDRAM 2.5 VOLT FBGA PACKAGE 16M X 16 256Mbit移动SDRAM 2.5伏FBGA封装16米x 16
256Mbit MOBILE SDRAM 2.5 VOLT FBGA PACKAGE 16M X 16 56Mbit移动SDRAM 2.5伏FBGA封装16x 16
|
Electronic Theatre Controls, Inc.
|
| K4S513233F-MC K4S513233F K4S513233F-F1H K4S513233F |
Mobile SDRAM 移动SDRAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| EM488M1644VBA-75F |
128Mb Mobile SDRAM
|
Electronic Theatre Controls, Inc.
|
| EM488M1644VBA-75F |
128Mb Mobile SDRAM
|
http://
ETC[ETC]
|
| K4X1G323PC-FE K4X1G323PC-FG K4X1G323PC-LG |
32Mx32 Mobile DDR SDRAM
|
Samsung semiconductor
|
